Articles
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Elastic properties and Ion-mediated domain switching of self-assembled heterostructures CuInP2S6-In4/3P2S6
Microstructures 2023;3:2023010. DOI: 10.20517/microstructures.2022.39AbstractVan der Waals (vdW) ferroelectric CuInP2S6 (CIPS) has attracted intense research interest due to its ... MOREVan der Waals (vdW) ferroelectric CuInP2S6 (CIPS) has attracted intense research interest due to its unique ferroelectric properties that make it promising for potential applications in flexible electronic devices. A mechanical mean, or so-called strain gradient engineering, has been proven as an effective method to modulate its ferroelectric properties, but the key parameter elastic constants Cij has not been accurately measured. Here, we utilized nanoindentation and contact resonance atomic force microscopy (CR-AFM) techniques to measure the elastic modulus on the (001) plane of nanoscale phase separated CuInP2S6-In4/3P2S6 (CIPS-IPS). The Young’s modulus of the CIPS was slightly less than that of the IPS. Density Functional Theory was introduced to obtain the accurate full elastic constant Cij of CIPS and IPS, and we deduced their respective Young’s moduli, all of which are in good agreement with our experimental values. We further discovered the asymmetrical domain switching and proposed an ion-mediated domain switching model. The results provide a reliable experimental reference for strain gradient engineering in the phase field simulation in CIPS-IPS. LESS Full articleResearch Article|Published on: 17 Jan 2023 -
Energy storage properties of NaNbO3-based lead-free superparaelectrics with large antiferrodistortion
Microstructures 2023;3:2023009. DOI: 10.20517/microstructures.2022.29AbstractNaNbO3-based lead-free energy storage ceramics are essential candidates for next-generation pulsed power capacitors, especially under ... MORENaNbO3-based lead-free energy storage ceramics are essential candidates for next-generation pulsed power capacitors, especially under the background of energy saving and environmental protection. However, the room-temperature antiferroelectric P phase of pure NaNbO3 ceramics limits its further development in energy storage owing to the irreversible antiferroelectric to ferroelectric phase transition under electric fields. In this work, CaZrO3 was introduced to NaNbO3 ceramics to destroy the long-range polarization ordering but keep large antiferrodistortion, causing the formation of superparaelectric state with macrodomains, which can be identified by the refinement results of high-energy synchrotron X-ray diffraction, neutron diffraction and TEM results. Combined with the fine grains, dense and homogeneous microstructure, ergodic relaxation behaviors, and delayed polarization saturation, a high recoverable energy storage density of ~5.4 J/cm3 and efficiency of ~82% can be realized in 0.85NaNbO3-0.15CaZrO3 ceramics at an ultrahigh breakdown electric field of ~68 kV/mm. The results found in this work suggest that the supersparaelectric with non-cubic phase would be a good candidate for generating excellent dielectric energy storage properties. LESS Full articleResearch Article|Published on: 12 Jan 2023 -
Trilayer PVDF nanocomposites with significantly enhanced energy density and energy efficiency using 0.55Bi0.5Na0.5TiO3-0.45(Sr0.7Bi0.2)TiO3 nanofibers
Microstructures 2023;3:2023008. DOI: 10.20517/microstructures.2022.31AbstractThe development of dielectric capacitors with high energy density and energy efficiency is of great ... MOREThe development of dielectric capacitors with high energy density and energy efficiency is of great significance in the modern electronic components market. To reduce the high energy loss of Bi0.5Na0.5TiO3, 0.55Bi0.5Na0.5TiO3-0.45(Sr0.7Bi0.2)TiO3 (BNT-BST) nanofibers with a high aspect ratio are synthesized via electrospinning. To achieve a high energy density, the design of a symmetric trilayer nanocomposite consisting of a BNT-BST/polyvinylidene difluoride (PVDF) layer with a high dielectric constant sandwiched between two layers of pure PVDF is herein described. The trilayer structure can effectively alleviate the electric field concentration effect, resulting in a considerably enhanced breakdown strength and improved discharge energy density. The maximum discharge energy density of 17.37 J/cm3 at 580 kV/mm could be achieved in the symmetric trilayer nanocomposite with a BNT-BST/PVDF middle layer, which is 90.5% greater than that achieved using pure PVDF(9.21 J/cm3 at450 kV/mm). This study presents a new case for developing dielectric capacitors with high energy density. LESS Full articleResearch Article|Published on: 11 Jan 2023 -
The influence of A/B-sites doping on antiferroelectricity of PZO energy storage films
Microstructures 2023;3:2023007. DOI: 10.20517/microstructures.2022.27AbstractAntiferroelectrics are a kind of unique dielectric materials, mainly due to their polarization behavior, and ... MOREAntiferroelectrics are a kind of unique dielectric materials, mainly due to their polarization behavior, and composition-induced antiferroelectricity stability also draws considerable attention. In this work, single orthorhombic phase (Pb0.95Bi0.05)ZrO3 (PBZ), Pb(Zr0.95Bi0.05)O3 (PZB), and PbZrO3 (PZO) films with good density and flatten surface was prepared on Pt/Ti/SiO2/Si substrate via sol-gel method. Compared with pure PZO films, the PBZ and PZB films possess increased switching electric field difference Δ E due to enhanced forward switching field and the late response of backward switching field. In terms of stabilizing AFE phase, changing the tolerance factor t has the similar effect as Bi-doping the A/B sites in PZO, with the modification of the A-site being more effective than that of the B-site. PBZ films achieve a high recoverable energy density (Wrec) of 26.4 J/cm3 with energy efficiency (η) of 56.2% under an electric field of 1278 kV/cm, which exceeds other pure AFE materials. This work provides a fundamental understanding of the crystal structure-related antiferroelectricity of PZO materials and broadens the chemical doping route to enhance the electric properties of AFE materials. LESS Full articleResearch Article|Published on: 10 Jan 2023 -
Environmental embrittlement behavior of high-entropy alloys
Microstructures 2023;3:2023006. DOI: 10.20517/microstructures.2022.26AbstractHigh entropy alloys (HEAs), as a new class of structural materials, have attracted extensive interest ... MOREHigh entropy alloys (HEAs), as a new class of structural materials, have attracted extensive interest from numerous metallurgical scientists and engineers. Benefiting from their unique microstructural features and outstanding mechanical performance, HEAs have shown significant potential for applications in many engineering fields, even under extreme conditions. In particular, when exposed to hydrogen and/or intermediate-temperature environments, these HEAs inevitably suffer from severe environmental embrittlement (EE) issues, e.g., hydrogen embrittlement (HE) and intermediate-temperature embrittlement (ITE), resulting in serious premature intergranular failure. In this work, we critically review the state-of-the-art advances of EE in previously reported HEA systems. Particular focus is given to novel strategies to enhance the resistance to EE in different HEAs. Two critical embrittlement phenomena, namely, HE and ITE, are highlighted separately. Finally, we provide perspectives on future research directions and opportunities for EE-resistant HEAs. LESS Full articleReview|Published on: 10 Jan 2023 -
An ultraviolet-visible distinguishable broadband photodetector based on the positive and negative photoconductance effects of a graphene/ZnO quantum dot heterostructure
Microstructures 2023;3:2023005. DOI: 10.20517/microstructures.2022.24AbstractBroadband photodetectors covering the ultraviolet (UV) to visible range are significant for applications in communication ... MOREBroadband photodetectors covering the ultraviolet (UV) to visible range are significant for applications in communication and imaging. Broadband photodetectors with the capacity to distinguish wavelength bands are highly desirable because they can provide additional spectral information. Herein, we report a UV-visible distinguishable broadband photodetector based on a graphene/ZnO quantum dot heterostructure. The photodetector exhibits negative photoconductance under visible illumination because the adsorbents on graphene act as scattering centers to reduce the carrier mobility. In contrast, under UV illumination, the photodetector shows positive photoconductance as the photogenerated electrons in the ZnO quantum dots transfer to the graphene, thereby increasing the conductivity. Thus, the detection and distinction of UV and visible illumination can be realized by utilizing the opposing photoconductivity changes. These results offer inspiration for the design of multifunctional broadband photodetectors. LESS Full articleResearch Article|Published on: 10 Jan 2023
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About The Journal
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ISSN
2770-2995 (Online)
Publisher
OAE Publishing Inc.
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$600
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Editor-in-Chief
Shujun Zhang
Publishing Model
Gold Open Access
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Copyright is retained by author(s)
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Total publications: 40
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