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From:  The influence of A/B-sites doping on antiferroelectricity of PZO energy storage films
The influence of A/B-sites doping on antiferroelectricity of PZO energy storage films

Figure 1. The schematic of 5 mol% Bi3+ replaces Pb2+ at A-site and Zr4+ at the B-site of PZO. PZO: PbZrO3.

Microstructures
ISSN 2770-2995 (Online)
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