fig2

The influence of A/B-sites doping on antiferroelectricity of PZO energy storage films

Figure 2. (A) The GIXRD patterns of PZO-based films at 2θ range from 20° to 60°. (B) The enlarged patterns at 2θ =30°-31°. GIXRD: Grazing incident X-ray diffraction; PZO: PbZrO3.

Microstructures
ISSN 2770-2995 (Online)
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