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From:  The influence of A/B-sites doping on antiferroelectricity of PZO energy storage films
The influence of A/B-sites doping on antiferroelectricity of PZO energy storage films

Figure 4. Frequency-dependent (A) dielectric constant and (B) dielectric loss for PZO-based films at room temperature. PZO: PbZrO3.

Microstructures
ISSN 2770-2995 (Online)
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