fig5

The influence of A/B-sites doping on antiferroelectricity of PZO energy storage films

Figure 5. (A) The P-E loops of PZO-based films at 800 kV/cm, and corresponding (C) the polarization difference value of Δ P (Pmax - Pr). (B) The I-E loops of PZO-based films at 800 kV/cm, and corresponding (D) the switching field value of Δ E (EF - EA). PZO: PbZrO3.

Microstructures
ISSN 2770-2995 (Online)
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