fig6

The influence of A/B-sites doping on antiferroelectricity of PZO energy storage films

Figure 6. (A-C) The P-E loops of PBZ, PZB, and pure PZO films at different electric fields, respectively. (D) The leakage current functions of electric field for PZO-based films. (E) The recoverable energy density Wrec and (F) the energy efficiency η of PZO-based films at an applied electric field. PBZ: (Pb0.95Bi0.05)ZrO3; PZB: Pb(Zr0.95Bi0.05)O3; PZO: PbZrO3.

Microstructures
ISSN 2770-2995 (Online)
Follow Us

Portico

All published articles are preserved here permanently:

https://www.portico.org/publishers/oae/

Portico

All published articles are preserved here permanently:

https://www.portico.org/publishers/oae/