fig5

Grain engineering of high energy density BaTiO<sub>3</sub> thick films integrated on Si

Figure 5. (A) Typical polarization-electric field hysteresis loops of the LaNiO3 buffered BaTiO3 film (~510 nm) and (B) the corresponding energy storage density Wrec and relative dielectric permittivityof the film in (A), as well as those of a BaTiO3 ceramic, plotted as functions of the applied electric field.

Microstructures
ISSN 2770-2995 (Online)
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