fig6

Grain engineering of high energy density BaTiO<sub>3</sub> thick films integrated on Si

Figure 6. (A) Typical polarization-electric field (P-E) hysteresis loops of the four unbuffered BaTiO3 films directly deposited on Pt/Ti/Si, with thicknesses ranging between 435 nm and 2610 nm; (B) The relative dielectric permittivity and loss tangents as functions of the applied voltage for the four films in (A).

Microstructures
ISSN 2770-2995 (Online)
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