fig3

Figure 3. The filled-states STM image and height profile are presented in (A) and (B). (A) STM image (71.5 × 70.2) nm² with a sample bias of -3.0 V and tunneling current I = 100 pA from ~0.27 ML of Si deposited at ~220 °C on Si(111)√3 × √3-Bi β-phase; (B) height profile along the line marked in Figure 1A. In Figure 1B, the positions of blue and red triangles were used to determine the height of the Si island and the step height of the Si(111) substrate with √3 × √3-Bi β-phase, respectively. STM: Scanning tunneling microscopy; ML: monolayer.