fig10

Figure 10. (A) Schematic diagram of the physical vapor deposition growth process, showing that SnSe nanosheets can be synthesized onto the ITO substrate with the source-substrate distance of 13-16 cm with the temperature of 860 K, and SnSe₂ nanosheets can be synthesized on the ITO substrate with the source-substrate distance of 17-20 cm with the temperature of 610 K. (Reproduced with permission^[56]. Copyright 2023, American Chemical Society); (B) Schematic diagram of the photogenerated carrier transfer pathway for the MoSe₂/Ti₂CO₂ heterostructure. (Reproduced with permission^[57]. Copyright 2021, Royal Society of Chemistry); (C and D) The time-dependent hole and electron population. (Reproduced with permission^[57]. Copyright 2021, Royal Society of Chemistry); (E) Calculated conduction and valence band edge positions for S-substituted SL MoO₃ and 1-6L MoS₂ with respect to the vacuum level and the standard H₂ electrode. The lower edge of the conduction band (orange color) and the upper edge of the valence band (blue color) are presented along with the band gap in electron volts. The dashed black lines indicate the water stability limits for H₂ and oxygen evolution. The absolute potential of the standard H₂ electrode was taken as 4.44 eV at pH = 0. (Reproduced with permission^[61]. Copyright 2021, American Chemical Society); (F) Evolution of the band gap and the Bader charge transfer (from MoS₂ layer to MoO_3-xS_x layer) of the S-doped MoO₃/MoS₂ heterostructure as a function of the sulfur concentration in the MoO₃ layer. (Reproduced with permission^[61]. Copyright 2021, American Chemical Society).