fig11
Figure 11. Two different stacking configurations are used in the construction of the α-In2Se3/arsenene vdW heterostructures because the α-In2Se3 layer has a different ferroelectric polarisation orientation, where A, B and C belong to Configuration I and D, E and F belong to Configuration II. The spontaneous out-of-plane electrode polarisation P in Configuration II points in the arsenene direction, whereas P in Configuration I points in the opposite direction. (Reproduced with permission[65]. Copyright 2022, Elsevier).
