fig5

Figure 5. (A) The time-dependent electron and (B) hole population of BCN/C₂N heterostructure. (Reproduced with permission^[36]. Copyright 2018, American Chemical Society); (C and D) 2D plane-integrated electron density difference along the Z direction for the C₇N₆/PSn-GaS and C₇N₆/SGa-SnP heterostructures. 3D isosurfaces of the electron density difference of the two heterostructures are plotted in the insets of this figure. The isosurface level is 0.0001e Å^–3. The orange and green regions represent electron accumulation and depletion, respectively. (Reproduced with permission^[37]. Copyright 2023, American Chemical Society); (E and F) Electrostatic potentials of C₇N₆/PSn-GaS and C₇N₆/SGa-SnP heterostructures. The horizontal arrows indicate the directions of the electric fields. The blue, yellow, and red arrows stand for the Janus layer, interfacial, and total effective electric fields, respectively. (Reproduced with permission^[37]. Copyright 2023, American Chemical Society).