fig8

Figure 8. (A) Planar-averaged charge density difference of arsenene/HfS₂ heterostructure along the Z direction. The blue and yellow regions represent charge depletion and charge accumulation, respectively. (Reproduced with permission^[50]. Copyright 2021, Elsevier); (B) Band edge position of arsenene/HfS₂ heterostructure after contact. (Reproduced with permission^[50]. Copyright 2021, Elsevier); The band gap (C) and band edge positions (D) of arsenene/HfS₂ heterostructure under various biaxial strains from -5 % to 5 % by HSE06. (Reproduced with permission^[50]. Copyright 2021, Elsevier). The optical adsorption coefficients of the GaN/BS heterostructures under different (E) biaxial strains and (F) external electric fields (where the value of wavelength ranges from 280 to 1,240 nm). (Reproduced with permission^[51]. Copyright 2022, Elsevier).