fig7

Microstructural evolution and ferroelectricity in HfO<sub>2 </sub>films

Figure 7. (A) Switchable polarization PSW of HfO2 films as a function of doping concentration for different dopants: Sc, Y, Si, Ge, Zr and N. (B) O-, T- and C-phase fraction of HfO2 films as a function of doping concentrations for various dopants. (C) PSW as a function of the M-phase fraction for HfO2 films with various dopants. (D) O-, T- and C-phase (111) peak positions as a function of the fraction of the M-phase for various dopants. The red and green arrows represent theoretical values for FE O-phase and non-FE T-phase, respectively[114]. PSW: switchable polarization; FE: ferroelectric.

Microstructures
ISSN 2770-2995 (Online)
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